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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1604 2SB1604A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO IN Collector-emitter voltage HAN C SEM GE 2SB1604A 2SB1604 2SB1604A 2SB1604 Open emitter OND IC CONDITIONS TOR UC MAX -40 -50 -20 -40 UNIT V Open base V VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Open collector -5 -10 -20 V A A Ta=25ae PC Collector dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 2 W 40 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SB1604 V(BR)CEO Collector-emitter breakdown voltage 2SB1604A VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB fT Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=-10A ;IB=-0.33A IC=-10A ;IB=-0.33A VCB=-40V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-3A ; VCE=-2V IE=0 ; VCB=-10V;f=1MHz IC=-10mA ;IB=0 CONDITIONS 2SB1604 2SB1604A SYMBOL MIN -20 TYP. MAX UNIT V -40 -0.6 -1.5 -50 -50 45 90 |I |I V V A A IN Output capacitance Transition frequency Switching times ton tstg tf Turn-on time Storage time Fall time ANG CH EMIC ES IC=-0.5A ; VCE=-10V IC=-3A; IB1=-IB2=-0.1A OND TOR UC 260 400 100 0.1 0.5 0.1 |I |I |I pF MHz s s s hFE-2 Classifications Q 90-180 P 130-260 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1604 2SB1604A SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1604 2SB1604A SEM GE HAN INC OND IC TOR UC 4 |
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